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DISCRETE SEMICONDUCTORS DATA SHEET BFT93 PNP 5 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 November 1992 Philips Semiconductors Product specification PNP 5 GHz wideband transistor DESCRIPTION PNP transistor in a plastic SOT23 envelope. It is primarily intended for use in RF wideband amplifiers, such as in aerial amplifiers, radar systems, oscilloscopes, spectrum analyzers, etc. The transistor features low intermodulation distortion and high power gain; due to its very high transition frequency, it also has excellent wideband properties and low noise up to high frequencies. NPN complements are BFR93 and BFR93A. PINNING PIN 1 2 3 base emitter collector 1 Top view BFT93 DESCRIPTION Code: X1p fpage 3 2 MSB003 Fig.1 SOT23. QUICK REFERENCE DATA SYMBOL VCBO VCEO Ic Ptot fT Cre GUM F Vo PARAMETER collector-base voltage collector-emitter voltage DC collector current total power dissipation transition frequency feedback capacitance up to Ts = 95 C; note 1 IC = -30 mA; VCE = -5 V; f = 500 MHz; Tj = 25 C IC = -2 mA; VCE = -5 V; f = 1 MHz open emitter open base CONDITIONS TYP. - - - - 5 1 16.5 2.4 300 MAX. -15 -12 -35 300 - - - - - UNIT V V mA mW GHz pF dB dB mV maximum unilateral power gain IC = -30 mA; VCE = -5 V; f = 500 MHz; Tamb = 25 C noise figure output voltage IC = -10 mA; VCE = -5 V; f = 500 MHz; Tamb = 25 C dim = -60 dB; IC = -30 mA; VCE = -5 V; RL = 75 ; f(p+q-r) = 493.25 MHz Note 1. Ts is the temperature at the soldering point of the collector tab. November 1992 2 Philips Semiconductors Product specification PNP 5 GHz wideband transistor LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM Ptot Tstg Tj PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage DC collector current peak collector current total power dissipation storage temperature junction temperature f > 1 MHz up to Ts = 95 C; note 1 CONDITIONS open emitter open base open collector - - - - - - -65 - MIN. MAX. -15 -12 -2 -35 -50 300 150 175 BFT93 UNIT V V V mA mA mW C C THERMAL RESISTANCE SYMBOL Rth j-s Note 1. Ts is the temperature at the soldering point of the collector tab. PARAMETER thermal resistance from junction to soldering point CONDITIONS up to Ts = 70 C; (note 1) THERMAL RESISTANCE 260 K/W November 1992 3 Philips Semiconductors Product specification PNP 5 GHz wideband transistor CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL ICBO hFE fT Cc Ce Cre GUM F Vo Notes 1. GUM is the maximum unilateral power gain, assuming S12 is zero and G UM S 21 ------------------------------------------------------------- dB. = 10 log 2 2 1 - S 11 1 - S 22 2 BFT93 PARAMETER collector cut-off current DC current gain transition frequency collector capacitance emitter capacitance feedback capacitance CONDITIONS IE = 0; VCB = -5 V IC = -30 mA; VCE = -5 V IC = -30 mA; VCE = -5 V; f = 500 MHz IE = ie = 0; VCB = -10 V; f = 1 MHz Ic = ic = 0; VEB = -0.5 V; f = 1 MHz IC = -2 mA; VCE = -5 V; f = 1 MHz - MIN. - 20 - - - - - - - TYP. 50 5 0.95 1.8 1 16.5 2.4 300 MAX. -50 - - - - - - - - UNIT nA GHz pF pF pF dB dB mV maximum unilateral power gain IC = -30 mA; VCE = -5 V; (note 1) f = 500 MHz; Tamb = 25 C noise figure output voltage IC = -10 mA; VCE = -5 V; f = 500 MHz; Tamb = 25 C see Fig.2 and note 2 2. dim = -60 dB (DIN 45004B); IC = -30 mA; VCE = -5 V; RL = 75 ; Vp = Vo at dim = -60 dB; fp = 495.25 MHz; Vq = Vo -6 dB; fq = 503.25 MHz; Vr = Vo -6 dB; fr = 505.25 MHz; measured at f(p+q-r) = 493.25 MHz. November 1992 4 Philips Semiconductors Product specification PNP 5 GHz wideband transistor BFT93 MEA382 handbook, halfpage 24 V 560 1.2 k 240 L2 L1 680 pF 680 pF output 75 handbook, halfpage 60 h FE 390 L3 40 680 pF input 75 DUT 20 16 MEA383 10 0 10 20 30 -I C (mA) 40 L2 = L3 = 5 H Ferroxcube choke, catalogue number 3122 108 20150. L1 = 4 turns 0.35 mm copper wire; winding pitch 1 mm; internal diameter 4 mm. VCE = -5 V; Tj = 25 C. Fig.2 Intermodulation distortion test circuit. Fig.3 DC current gain as a function of collector current. MEA925 MEA381 handbook, halfpage 2.0 Cc (pF) 1.6 handbook, halfpage 6 fT (GHz) 4 1.2 0.8 2 0.4 0 0 4 8 12 16 V CB (V) 20 0 0 10 20 30 -I C (mA) 40 IE = ie = 0; f = 1 MHz; Tj = 25 C. VCE = -5 V; f = 500 MHz; Tj = 25 C. Fig.4 Collector capacitance as a function of collector-base voltage. Fig.5 Transition frequency as a function of collector current. November 1992 5 Philips Semiconductors Product specification PNP 5 GHz wideband transistor BFT93 MEA923 MEA924 handbook, halfpage 5 handbook, halfpage 8 F (dB) 4 F (dB) 6 3 4 2 2 1 0 0 10 20 30 40 50 I C (mA) 0 10 -1 1 f (GHz) 10 VCE = -5 V; Zs = opt.; f = 500 MHz; Tamb = 25 C. IC = -2 mA; VCE = -5 V; Zs = opt.; Tamb = 25 C. Fig.6 Minimum noise figure as a function of collector current. Fig.7 Minimum noise figure as a function of frequency. November 1992 6 Philips Semiconductors Product specification PNP 5 GHz wideband transistor PACKAGE OUTLINE Plastic surface mounted package; 3 leads BFT93 SOT23 D B E A X HE vMA 3 Q A A1 1 e1 e bp 2 wMB detail X Lp c 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max. 0.1 bp 0.48 0.38 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 0.95 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1 OUTLINE VERSION SOT23 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-02-28 November 1992 7 Philips Semiconductors Product specification PNP 5 GHz wideband transistor DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values BFT93 This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. November 1992 8 |
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